STB160NF3LLT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB16NB25 , N - CHANNEL 250V - 0.220ohm - 16A - TO-263 PowerMESH] MOSFET
STB16NF06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STB16NF06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STB16NK65Z-S ,N-CHANNEL 650 VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTP16NK65Z 650 V < 0.50 Ω 13 A 190 WSTB16NK65Z- ..
STB16NS25 ,N-CHANNEL 250VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 250 VDS GSV Drain- ..
STV0196 , QPSK/BPSK DEMODULATOR AND FEC IC
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STV0297J ,UNIVERSAL DIGITAL CABLE DEMODULATOR STV0297J® STV0297JUniversal digital cable demodulatorDATA BRIEFDescriptionThe STV0297J is a highly integrat ..
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STB160NF3LLT4
N-CHANNEL 30V
1/7
PRELIMINARY DATAMay 2002
STB160NF3LLN-CHANNEL 30V - 0.0026 Ω - 160A D2 PAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE LOGIC LEVEL DEVICE 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
(*) Current Limited by Package
(1) Starting Tj = 25 oC, ID = 80A, VDD = 20V
INTERNAL SCHEMATIC DIAGRAM
STB160NF3LL
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF (*)
DYNAMIC
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STB160NF3LLSWITCHING ON (*)
SWITCHING OFF(*)
SOURCE DRAIN DIODE(*)
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by Tjmax
ELECTRICAL CHARACTERISTICS (continued)
STB160NF3LL
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STB160NF3LL
STB160NF3LL* on sales type
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*2 PAK FOOTPRINT