STP160N75F3 ,N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
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STB160N75F3-STP160N75F3
N-channel 75 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in D2PAK package
October 2007 Rev 2 1/16
STB160N75F3
STP160N75F3 - STW160N75F3N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2 PAK ripFET™ Power MOSFET
Features Ultra low on-resistance 100% Avalanche tested
Application Switching applications
DescriptionThis N-channel enhancement mode Power
MOSFET is the latest refinement of ST’s
STripFET™ process. The resulting transistor
shows extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
Figure 1. Internal schematic diagram Current limited by package
Table 1. Device summary
Contents STB160N75F3 - STP160N75F3 - STW160N75F32/16
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings Current limited by package Pulse width limited by safe operating area ISD < 120A, di/dt < 1100 A/µs, VDD < 60V, TJ < TJMAX Starting TJ = 25°C, ID = 60A, VDD = 25V
Table 3. Thermal resistance When mounted on 1 inch² FR4 2 oz Cu
Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic
STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical characteristics
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Table 6. Switching times
Table 7. Source drain diode Pulse with limited by safe operating area Pulsed: pulse duration = 300µs, duty cycle 1.5%
Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3
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2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 /
TO-247
Figure 3. Thermal impedance for TO-220 /
TO-247
Figure 4. Safe operating area for D²PAK Figure 5. Thermal impedance for D²PAK
Figure 6. Output characteristics Figure 7. Transfer characteristics
STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical characteristics
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Figure 8. Normalized BV DSS vs temperature Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3
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Figure 14. Source-drain diode forward
characteristics
