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STB150NF55T4
N-CHANNEL 55V
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AUTOMOTIVE SPECIFICOctober 2002
STB150NF55 STP150NF55
STW150NF55N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.005 Ω SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) ISD ≤120A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V
STB150NF55 STP150NF55 STW150NF55
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
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STB150NF55 STP150NF55 STW150NF55SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB150NF55 STP150NF55 STW150NF55Output Characteristics Transfer Characteristics
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STB150NF55 STP150NF55 STW150NF55Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
STB150NF55 STP150NF55 STW150NF55
Allowable Iav vs. Time in AvalancheThermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the Allowable Current in Avalanche
PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
tAV is the Time in Avalanche
To derate above 25 oC, at fixed IAV, the following equation must be applied:
IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)
Where:
Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .
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