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STB130NH02L
N-CHANNEL 24V
1/11February 2003
STB130NH02LN-CHANNEL 24V - 0.0034 Ω - 120A D²PAK
STripFET™ III POWER MOSFET FOR DC-DC CONVERSION TYPICAL RDS(on) = 0.0034 Ω @ 10 V TYPICAL RDS(on) = 0.005 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTIONThe STB130NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. It is
ideal in high performance DC-DC converter applications
where efficiency is to be achieved at very high output
currents.
APPLICATIONS SYNCHRONOUS RECTIFICATIONS FOR
TELECOM AND COMPUTER OR-ING DIODE
ABSOLUTE MAXIMUM RATINGS
INTERNAL SCHEMATIC DIAGRAM
STB130NH02L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (5)
DYNAMIC
3/11
STB130NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE(1) Garanted when external Rg=4.7 Ω and tf < tfmax. (5) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Value limited by wire bonding (6) Qoss = Coss*Δ Vin , Coss = Cgd + Cds . See Appendix A
(3) Pulse width limited by safe operating area. (7) Gate charge for synchronous operation
(4) Starting Tj = 25 oC, ID = 45A, VDD = 10V .
ELECTRICAL CHARACTERISTICS (continued)
STB130NH02LOutput Characteristics Transfer Characteristics
5/11
STB130NH02LNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test CircuitAnd Diode Recovery Times
