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STB12NM50T4
N-CHANNEL 500V
1/12October 2002
STP12NM50 - STP12NM50FP
STB12NM50 - STB12NM50-1N-CHANNEL 500V - 0.30Ω - 12A TO-220/FP/D2 PAK/I2 PAK
MDmesh™Power MOSFET
(1)ISD ≤12 A, di/dt ≤400 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed TYPICAL RDS(on) = 0.30Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTIONThe MDmesh™ is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance that is significantly better than that of similar
competition’s products.
APPLICATIONSThe MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/12
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Safe Operating Area For TO-220FPSafe Operating Area For TO-220 / D²PAK/I²PAK
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Thermal Impedance For TO-220 /D²PAK/ I²PAK
Output Characteristics
Static Drain-source On Resistance
Transconductance
5/12
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuits For Resistive Load
