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STB12NM50FDT4
N-CHANNEL 500V 0.32 OHM 12A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 FDMESH POWER MOSFET
1/14June 2002
STP12NM50FD-STP12NM50FDFP-STW14NM50FD
STB12NM50FD - STB12NM50FD-1N-CHANNEL500V-0.32Ω-12ATO-220/FP/D2 PAK/I2 PAK/TO-247
FDmesh™ Power MOSFET (with FAST DIODE) TYPICAL RDS(on) = 0.32 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTIONThe FDmesh™ associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ORDERING INFORMATION
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) ISD ≤12A, di/dt ≤ 400 μA, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
3/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
Safe Operating Area For TO-247
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-247
Thermal Impedance For TO-220FP
5/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
Transfer Characteristics
Gate Charge vs Gate-source Voltage Capacitance Variations
Transconductance Static Drain-source On Resistance
Output Characteristics
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
Normalized BVDSS vs Temperature
7/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
