STP12NK80Z ,N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP12NK80Z - STB12NK80ZSTW12NK80Z2N-CHANNEL 800V - 0.65Ω - 10.5A TO-220 / D PAK / TO-247Zener-Prote ..
STP12NM50 ,N-CHANNEL 500VAPPLICATIONSThe MDmesh™ family is very suitable for increasingpower density of high voltage convert ..
STP12NM50FDFP ,N-CHANNEL 500V 0.32 OHM 12A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 FDMESH POWER MOSFET
STP12NM50FP ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STP12NM60N , N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET
STP13N95K3 ,N-channel 950 V, 0.68 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES
STB12NK80Z-STB12NK80ZT4-STP12NK80Z
N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
1/12February 2004
STP12NK80Z- STB12NK80Z
STW12NK80ZN-CHANNEL 800V- 0.65Ω - 10.5A TO-220/ D2 PAK/ TO-247
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 0.65Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES
ORDERING INFORMATION
STP12NK80Z- STB12NK80Z- STW12NK80Z2/12
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤10.5A, di/dt ≤200A/µs,VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/12
STP12NK80Z- STB12NK80Z- STW12NK80Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP12NK80Z- STB12NK80Z- STW12NK80Z4/12
Safe Operating Area for To-247
Safe Operating Area for To-220/D²PAK
Transfer CharacteristicsOutput Characteristics
Thermal Impedance for To-220/D²PAK
Thermal Impedance for To-247
5/12
STP12NK80Z- STB12NK80Z- STW12NK80Z
Transconductance Static Drain-source On Resistance
Gate Chargevs Gate-source Voltage
Normalized Gate Threshold Voltagevs Temp. Normalized On Resistancevs Temperature
Capacitance
STP12NK80Z- STB12NK80Z- STW12NK80Z6/12
Maximum
Normalized BVDSSvs TemperatureSource-drain Diode Forward Characteristics
