STB120NH03LT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
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STB12NK80ZT4 ,N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)800 VDS GSV Drain-g ..
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STV0196 , QPSK/BPSK DEMODULATOR AND FEC IC
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STB120NH03LT4
N-CHANNEL 30V
STB120NH03LN-CHANNEL 30V - 0.005 Ω - 60A D2 PAK
STripFET™ III POWER MOSFET FOR DC-DC CONVERSION TYPICAL RDS(on) = 0.005 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTIONThe STB120NH03L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. It is ideal
in high performance DC-DC converter applications where
efficiency is to be achieved at very high output currents.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC-DC
CONVERTERS
Ordering Information
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
(1) Starting Tj = 25 oC, ID = 30A, VDD = 15V
INTERNAL SCHEMATIC DIAGRAM
STB120NH03L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
STB120NH03LThermal Impedance
SWITCHING ON (*)
SWITCHING OFF(*)
SOURCE DRAIN DIODE(*)
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. (1) Qoss = Coss*Δ Vin , Coss = Cgd + Cds . See Appendix A
(•)Pulse width limited by Tjmax (2) Gate charge for synchronous operation
ELECTRICAL CHARACTERISTICS (continued)Safe Operating Area
STB120NH03LGate Charge vs Gate-source Voltage Capacitance Variations
STB120NH03L .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
