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Partno	Mfg	Dc	Qty	Available	Descript
STB11NM80	ST	N/a	4	avai	N-CHANNEL 800 V
STP11NM80	ST	N/a	1800	avai	N-CHANNEL 800 V

STP11NM80 ,N-CHANNEL 800 VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
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STB11NM80-STP11NM80
N-CHANNEL 800 V
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ADVANCED DATA
January 2003
STP11NM80
STB11NM80
N-CHANNEL 800V- 0.35Ω -11A TO-220/D2 PAK
MDmesh™Power MOSFET TYPICAL RDS(on)= 0.35Ω LOW GATE INPUT RESISTANCE LOW INPUT CAPACITANCE AND GATE
CHARGE
DESCRIPTION
The MDmesh™isa new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product hasan outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance thatis significantly better than
thatof similar competition’s products.
APPLICATIONS
The 800V MDmesh™ familyis very suitablefor sin-
gle switch applicationsin particular for Flyback and
Forward converter topologies.
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limitedby safe operating area
(1)ISD<11A, di/dt<400A/μs, VDDSTP11NM80- STB11NM80
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%.
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STP11NM80- STB11NM80
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration= 300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
STP11NM80- STB11NM80
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Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
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STP11NM80- STB11NM80
STP11NM80- STB11NM80
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