STB11NM60FD-STB11NM60FD-1-STB11NM60FDT4 Fast Delivery |IC PHOENIX CO.,LIMITED

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Partno	Mfg	Dc	Qty	Available	Descript
STB11NM60FD	ST	N/a	4800	avai	N-CHANNEL 600V
STB11NM60FD-1 \|STB11NM60FD1	ST	N/a	800	avai	N-CHANNEL 600V
STB11NM60FDT4	ST	N/a	4800	avai	N-CHANNEL 600V

STB11NM60FDT4 ,N-CHANNEL 600VAPPLICATIONS

STB11NM60FD-STB11NM60FD-1-STB11NM60FDT4
N-CHANNEL 600V
1/13February 2004
STP11NM60FD- STB11NM60FD
STP11NM60FDFP- STB11NM60FD-1
N-CHANNEL 600V-0.40Ω-11ATO-220/TO-220FP/I2 PAK/D2 PAK
FDmesh™Power MOSFET (with FAST DIODE) TYPICAL RDS(on)= 0.40Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmesh™ associates all advantagesof re-
duced on-resistance and fast switching with anin-
trinsic fast-recovery body diode.Itis therefore
strongly recommendedfor bridge topologies,in par-
ticular ZVS phase-shift converters.
APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ORDER CODES
STP11NM60FD- STP11NM60FDFP- STB11NM60FD- STB11NM60FD-1
2/13
ABSOLUTE MAXIMUM RATINGS )Pulse width limitedby safe operating area
(1)ISD<11A, di/dt<400A/µs,V DD(*)Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
3/13
STP11NM60FD- STP11NM60FDFP- STB11NM60FD- STB11NM60FD-1
DYNAMIC
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area.
STP11NM60FD- STP11NM60FDFP- STB11NM60FD- STB11NM60FD-1
4/13
Safe Operating for TO-220/I2 PAK/D2 PAK Safe Operating Area for TO-220FP
Thermal Impedance for TO-220FPThermal Impedance for TO-220/I2 PAK
Transfer CharacteristicsOutput Characteristics
5/13
STP11NM60FD- STP11NM60FDFP- STB11NM60FD- STB11NM60FD-1
Static Drain-source On ResistanceTransconductance
Gate Capacitance
Normalized On Resistancevs TemperatureNormalized Gate Thereshold Voltagevs Temp.
STP11NM60FD- STP11NM60FDFP- STB11NM60FD- STB11NM60FD-1
6/13
Source-drain Diode Forward Characteristics
7/13
STP11NM60FD- STP11NM60FDFP- STB11NM60FD- STB11NM60FD-1
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load

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