STB11NM60A-1 ,N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NM60ASTP11NM60AFPSTB11NM60A-1V Drain-source ..
STB11NM60FD ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NM60FD STP11NM60FDFPSTB11NM60FDSTB11NM60FD- ..
STB11NM60FD-1 ,N-CHANNEL 600VSTP11NM60FD- STB11NM60FDSTP11NM60FDFP - STB11NM60FD-12 2N-CHANNEL 600V-0.40Ω -11ATO-220/TO-220FP/I ..
STB11NM60FDT4 ,N-CHANNEL 600VAPPLICATIONS
STB11NM60A-1
N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET
1/11March 2002
STP11NM60A
STP11NM60AFP - STB11NM60A-1N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2 PAK
MDmesh™Power MOSFET TYPICAL RDS(on) = 0.4Ω HIGH dv/dt LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE
DESCRIPTIONThe MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt. The adoption
of the Company’s proprietary strip technique yields
overall dynamic performance that is significantly
better than that of similar competition’s products.
APPLICATIONSThe MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
STP11NM60A/STP11NM60AFP/STB11NM60A-1
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) ISD ≤11A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATAON/OFF
3/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Thermal Impedance for TO-220 / I2PAK
Transfer CharacteristicsOutput Characteristics
Safe Operating Area for TO-220FPSafe Operating Area for TO-220 / I2PAK
Thermal Impedance for TO-220FP
5/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Capacitance VariationsGate Charge vs Gate-source Voltage
Transconductance Static Drain-source On Resistance
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Source-drain Diode Forward Characteristics
