STB11NM60-1 ,N-CHANNEL 600VAPPLICATIONSThe MDmesh™ family is very suitable for increasingpower density of high voltage convert ..
STB11NM60A-1 ,N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NM60ASTP11NM60AFPSTB11NM60A-1V Drain-source ..
STB11NM60FD ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NM60FD STP11NM60FDFPSTB11NM60FDSTB11NM60FD- ..
STB11NM60FD-1 ,N-CHANNEL 600VSTP11NM60FD- STB11NM60FDSTP11NM60FDFP - STB11NM60FD-12 2N-CHANNEL 600V-0.40Ω -11ATO-220/TO-220FP/I ..
STB11NM60FDT4 ,N-CHANNEL 600VAPPLICATIONS
STB11NM60-STB11NM60-1-STP11NM60-STP11NM60FP
N-CHANNEL 600V
1/12August 2002
STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2 PAK/I2 PAK
MDmesh™Power MOSFET
(*)Limited only by maximum temperature allowed
(1)ISD<11A, di/dt<400A/μs, VDD
CHARGE LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/12
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220/D2PAK/I2PAK Safe Operating Area for TO-220FP
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
Thermal Impedance for TO-220FPThermal Impedance for TO-220/D2PAK/I2PAK
5/12
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Capacitance VariationsGate Charge vs Gate-source Voltage
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
