STB11NB40T4 ,N-CHANNEL 400VAbsolute Maximum RatingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 400 VDS GSV Drain ..
STB11NK40Z ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK40ZT4 ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2TO-220FPTO-220 / D PAKV Drain-source Voltage (V ..
STB11NM60 ,N-CHANNEL 600VSTP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-12 2N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D PAK/I ..
STB11NM60-1 ,N-CHANNEL 600VAPPLICATIONSThe MDmesh™ family is very suitable for increasingpower density of high voltage convert ..
STU6NA90 ,NSTU6NA90N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) D ..
STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CTable 5. On /off statesSymbol Para ..
STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics (curves) . . . . 63 Test circuits . . . . . . 94 Pac ..
STU85N3LH5 ,N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAKElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
STU9NB80 ,N-CHANNEL 800VSTU9NB80®N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTU9NB80 8 ..
STU9NC80ZI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STB11NB40T4
N-CHANNEL 400V
1/11April 2004
STB11NB40
STB11NB40-1N-CHANNEL 400V - 0.48 Ω - 10.7A D2 PAK/I2 PAK
PowerMESH™ MOSFET
REV. 2
Table 1. General Features
FEATURES SUMMARY TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/dt
capabilities and unrivalled gate charge and switch-
ing characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
Figure 1. Package
Figure 2. Internal Schematic Diagram
Table 2. Order Codes
STB11NB40/STB11NB40-1
Table 3. Absolute Maximum RatingsNote:1. Pulse width limited by safe operating area ISD ≤ 11A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Table 4. Thermal Data
Table 5. Avalanche Characteristics
3/11
STB11NB40/STB11NB40-1
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)
Table 6. Off
Table 7. On (1)Note:1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 8. DynamicNote:1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 9. Switching On
Table 10. Switching Off
STB11NB40/STB11NB40-1
Table 11. Source Drain DiodeNote:1. Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Figure 3. Safe Operating Area Figure 4. Thermal Impedance
Figure 5. Output Characteristics Figure 6. Transfer Characteristics
5/11
STB11NB40/STB11NB40-1
Figure 7. Transconductance Figure 8. Static Drain-source On Resistance
Figure 9. Gate Charge vs Gate-source Voltage Figure 10. Capacitance Variations
Figure 11. Normalized Gate Thresold Voltage
vs Temperature
Figure 12. Normalized On Resistance vs
Temperature
STB11NB40/STB11NB40-1
Figure 13. Source-drain Diode Forward
Characteristics
