STB11NB40 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB11NB40N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB11NB40 400 V < 0.55 ..
STB11NB40T4 ,N-CHANNEL 400VAbsolute Maximum RatingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 400 VDS GSV Drain ..
STB11NK40Z ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK40ZT4 ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2TO-220FPTO-220 / D PAKV Drain-source Voltage (V ..
STB11NM60 ,N-CHANNEL 600VSTP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-12 2N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D PAK/I ..
STU6NA90 ,NSTU6NA90N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) D ..
STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CTable 5. On /off statesSymbol Para ..
STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics (curves) . . . . 63 Test circuits . . . . . . 94 Pac ..
STU85N3LH5 ,N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAKElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
STU9NB80 ,N-CHANNEL 800VSTU9NB80®N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTU9NB80 8 ..
STU9NC80ZI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STB11NB40
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
STB11NB40N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
March 1998
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤ 11A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STB11NB402/9
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STB11NB403/9
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STB11NB404/9
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STB11NB405/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
STB11NB406/9
