STB10NB50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
STB10NB50T4 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
STB10NC50 ,N-CHANNEL 500VSTB10NC50-1®2 2N - CHANNEL 500V - 0.48Ω - 10A - I PAK/D PAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V ..
STB10NC50T4 ,N-CHANNEL 500VSTB10NC50-1®2 2N - CHANNEL 500V - 0.48Ω - 10A - I PAK/D PAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V ..
STB10NK60Z ,N-CHANNEL 600VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND P ..
STB10NK60Z-1 ,N-CHANNEL 600VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STU60N55F3 , N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET™ III Power MOSFET
STU6NA90 ,NSTU6NA90N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) D ..
STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CTable 5. On /off statesSymbol Para ..
STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics (curves) . . . . 63 Test circuits . . . . . . 94 Pac ..
STU85N3LH5 ,N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAKElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
STU9NB80 ,N-CHANNEL 800VSTU9NB80®N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTU9NB80 8 ..
STB10NB50
N-CHANNEL 500V
1/9November 2002
STB10NB50N-CHANNEL 500V- 0.55Ω - 10.6A D²PAK
PowerMesh™ MOSFET TYPICAL RDS(on)= 0.55Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERINGIN TAPE&
REEL
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced familyof power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS SWITH MODE POWER SUPPLIES (SMPS) HIGH CURRENT, HIGH SPEED SWITCHING DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limitedby safe operating area
(1)ISD ≤10.6A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
STB10NB502/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF(1)
DYNAMIC
3/9
STB10NB50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
Thermal ImpedenceSafe Operating Area
STB10NB504/9
Gate Chargevs Gate-source Voltage Capacitance Variations
Static Drain-source On ResistanceTransconductance
Output Characteristics Transfer Characteristics
5/9
STB10NB50
Source-drain Diode Forward Characteristics
Normalized On Resistancevs TemperatureNormalized Gate Thereshold Voltagevs Temp.
STB10NB506/9
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
