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Partno	Mfg	Dc	Qty	Available	Descript
STB100NF04T4	ST	N/a	4800	avai	N-CHANNEL 40V

STB100NF04T4 ,N-CHANNEL 40VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)40 VDS GSV Drain-ga ..
STB100NH02L ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB100NH02LT4 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB10NB50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
STB10NB50T4 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
STB10NC50 ,N-CHANNEL 500VSTB10NC50-1®2 2N - CHANNEL 500V - 0.48Ω - 10A - I PAK/D PAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V ..
STU60N55F3 , N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET™ III Power MOSFET
STU6NA90 ,NSTU6NA90N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) D ..
STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CTable 5. On /off statesSymbol Para ..
STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics (curves) . . . . 63 Test circuits . . . . . . 94 Pac ..
STU85N3LH5 ,N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAKElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
STU9NB80 ,N-CHANNEL 800VSTU9NB80®N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTU9NB80 8 ..

STB100NF04T4
N-CHANNEL 40V
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PRELIMINARY DATA
March 2004
STP100NF04
STB100NF04-1
N-CHANNEL 40V- 0.0043Ω - 120A TO-220/I2 PAK
STripFET™II POWER MOSFET
(#) Current Limitedby Package
(1) ISD≤ 120A, di/dt≤300 A/μs, VDD≤ V(BR)DSS,Tj≤TjMAX
(2) StartingTj= 25°C,Id= 60A, VDD=30V TYPICAL RDS(on)= 0.0043Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
DESCRIPTION
This Power Mosfetis the latest developmentof
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps thereforeare-
markable manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC& DC-AC CONVERTERS SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
STP100NF04/STB100NF04-1
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
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STP100NF04/STB100NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area.
STP100NF04/STB100NF04-1
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STP100NF04/STB100NF04-1
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
STP100NF04/STB100NF04-1
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