STB100NF03L-03-1 ,N-CHANNEL 30VSTB100NF03L-03 STP100NF03L-03STB100NF03L-03-1N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220STrip ..
STB100NF03L-03T4 ,N-CHANNEL 30VSTB100NF03L-03 STP100NF03L-03STB100NF03L-03-1N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220STrip ..
STB100NF04 ,N-CHANNEL 40V 0.0043 OHM 120A TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFETSTP100NF04STB100NF04, STB100NF04-12 2N-CHANNEL 40V - 0.0043Ω - 120A TO-220/D PAK/I PAKSTripFET™ II ..
STB100NF04L ,N-CHANNEL 40V 0.0036 OHM 100A D2PAK STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)40 VDS GSV Drain-g ..
STB100NF04LT4 ,N-CHANNEL 40V 0.0036 OHM 100A D2PAK/I2PAK STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 40 VDS GSV Drain- ..
STB100NF04T4 ,N-CHANNEL 40VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)40 VDS GSV Drain-ga ..
STU36NB20 ,N-CHANNEL 200V 0.052OHM 36A MAX220 POWERMESH MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STU3N62K3 ,N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in IPAK packageapplicationsDescriptionThe new SuperMESH3™ series is obtained through the combination of a further ..
STU60N55F3 , N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET™ III Power MOSFET
STU6NA90 ,NSTU6NA90N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) D ..
STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CTable 5. On /off statesSymbol Para ..
STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics (curves) . . . . 63 Test circuits . . . . . . 94 Pac ..
STB100NF03L-03-STB100NF03L-03-1
N-CHANNEL 30V
1/11February 2003
STB100NF03L-03 STP100NF03L-03
STB100NF03L-03-1N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
(1) Current Limited by Package
(2) Starting Tj = 25 oC, IAR = 50A, VDD = 50V
INTERNAL SCHEMATIC DIAGRAM
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF (*)
DYNAMIC
3/11
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
5/11
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1Normalized Gate Threshold Voltage vs Temperature .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test CircuitAnd Diode Recovery Times
