ST5771 ,PNP Switching Transistorapplications at currents to 100mA. Sourced from Process 65.See PN4258 for characteristics.Absolute ..
ST5771-1 ,PNP Switching Transistorapplications at currents to 100mA. Sourced from Process 65.See PN4258 for characteristics.Absolute ..
ST5771-1 ,PNP Switching Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
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ST5771
PNP Switching Transistor
ST5771-1 Discrete POWER & Signal Technologies ST5771-1 TO-92 C B E PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 100mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 15 V CEO VCBO Collector-Base Voltage 15 V V Emitter-Base Voltage 4.5 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units ST5771-1 P Total Device Dissipation 350 mW D 2.8 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 125 °C/W JC Thermal Resistance, Junction to Ambient 357 °C/W RθJA 1997
