ST2408HI ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORST2408HI®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ NEW SERIES, ENHANCED PERFORMANCE■ FULLY I ..
ST2408HI. ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORST2408HI®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ NEW SERIES, ENHANCED PERFORMANCE■ FULLY I ..
ST24c01 ,SERIAL 1K 128 x 8 EEPROMLogic DiagramSELF TIMED PROGRAMMING CYCLEAUTOMATIC ADDRESS INCREMENTINGENHANCED ESD/LATCH UPPERFORM ..
ST24C01 ,SERIAL 1K 128 x 8 EEPROMAbsolute Maximum Ratings Symbol Parameter Value UnitT Ambient Operating Temperature –40 to 125 °CA ..
ST24C01M6TR ,SERIAL 1K 128 x 8 EEPROMLogic DiagramSELF TIMED PROGRAMMING CYCLEAUTOMATIC ADDRESS INCREMENTINGENHANCED ESD/LATCH UPPERFORM ..
ST24c02 ,SERIAL 2K (256 X 8) EEPROMAbsolute Maximum Ratings Symbol Parameter Value UnitTA Ambient Operating Temperature –40 to 125 °C ..
STL70N4LLF5 ,Automotive-grade N-channel 40 V, 6.1 mOhm, 18 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol P ..
STL71 , MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STL72 , MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STL73 ,medium Voltage Fast Switching NPN Power TransistorAPPLICATIONSn COMPACT FLUORESCENT LAMPS (CFLS) TO-92 DESCRIPTIONFigure 2: Interna ..
STL75NH3LL , N-channel 30 V, 0.004 Ω, 20 A, PowerFLAT™ (6x5) ultra low gate charge STripFET™ Power MOSFET
STL80N4LLF3 , N-channel 40V - 0.0042ohm - 80A - PowerFLAT (6x5) STripFET Power MOSFET for DC-DC conversion
ST2408HI-ST2408HI.
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
ST2408HIHIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS
APPLICATIONS: HORIZONTAL DEFLECTION FOR
MONITORS 17 INCHES AND HIGH END TVS
DESCRIPTION The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
December 2002
ABSOLUTE MAXIMUM RATINGS1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
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Derating Curve
Collector Emitter Saturation Voltage
DC Current Gain
Output Characteristics
Base Emitter Saturation Voltage
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Power Losses
Figure 1: Inductive Load Switching Test Circuit.Switching Time Inductive Load
Reverse Biased Soa
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. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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