ST2310DHI ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORST2310DHI®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ NEW SERIES, ENHANCED PERFORMANCE■ FULLY ..
ST2310FX ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORST2310FXHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR n NEW SERIES, ENHANCED PERFORMANCE Figur ..
ST2310FX ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAbsolute Maximum RatingsSymbol Parameter Value UnitV Collector-Emitter Voltage (V = 0)1500 VCES BEV ..
ST2310HI ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORST2310HI®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ NEW SERIES, ENHANCED PERFORMANCE■ FULLY I ..
ST232 ,5V POWERED MULTI-CHANNEL RS-232 DRIVERS AND RECEIVERSELECTRICAL CHARACTERISTICSo(C1 -C4 = 0.1μF, VCC =5V ± 10%, TA = -40 to 85 C, unless otherwise speci ..
ST232AB ,VERY HIGH SPEED, ULTRA LOW POWER CONSUMPTION 5V POWERED RS-232 DRIVERS AND RECEIVERSapplicationsSOP Large TSSOPwhere ± 12V is not available. The ST232 uses asingle 5V power supply and ..
STK8250 ,50W MIN AF POWER AMP
STK8260 , OUTPUT STAGE OF AF POWER AMP
STK8270 , OUTPUT STAGE OF AF POWER AMP
STK8280 , 80W MIN AF POWER AMP, OUTPUT STAGE (DUAL SUPPLIES) WITH BUILT-IN QUASI CLASS A BIAS CIRCUIT
STK830F , Advanced Power MOSFET
STK850 , N-CHANNEL 30V - 0.0024 Ω - 30A - PolarPAK-TM STripFET™ Power MOSFET
ST2310DHI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
ST2310DHIHIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS
APPLICATIONS: HORIZONTAL DEFLECTION HIGH END TVS
DESCRIPTION The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
December 2002
ABSOLUTE MAXIMUM RATINGS1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
ST2310DHI2/6
Derating Curve
Collector Emitter Saturation Voltage
DC Current Gain
Output Characteristics
Base Emitter Saturation Voltage
DC Current Gain
ST2310DHI3/6
Power Losses Switching Time Inductive Load
Reverse Biased SOA
Figure 1: Inductive Load Switching Test Circuit.
ST2310DHI4/6
ST2310DHI5/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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ST2310DHI6/6
