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ST13007D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
ST13007DHIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR IMPROVED SPECIFICATION:
- LOWER LEAKAGE CURRENT
- TIGHTER GAIN RANGE
- DC CURRENT GAIN PRESELECTION
- TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 oC LARGE RBSOA
APPLICATIONS UP TO 120W ELECTRONIC
TRANSFORMERS FOR HALOGEN LAMPS SWITCH MODE POWER SUPPLIES
DESCRIPTION The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance
switching speeds.
February 2002
ABSOLUTE MAXIMUM RATINGS1/7
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
* Pulsed: Pulse duration = 300 μs, duty cycle 2 %.
ST13007D2/7
Safe Operating Area
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Saturation Voltage
ST13007D3/7
Diode Forward Voltage
Switching Time Inductive Load
Switching Time Resistive Load
Reverse Biased SOA
ST13007D4/7
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.
ST13007D5/7
ST13007D6/7
