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SSW7N60BTM
600V N-Channel B-FET / Substitute of SSI7N60A
SSW7N60B / SSI7N60B November 2001 SSW7N60B / SSI7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.0A, 600V, R = 1.2Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar, DMOS technology. • Low Crss ( typical 23 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D D !!!!!!!! ! ! ! ! ! ! ! ! # # # # # # # # " " " " " " " " ! ! ! ! ! ! ! ! G!!!!!!!! ! ! ! ! ! ! ! ! 2 2 GS D -PAK I -PAK GS D SSW Series SSI Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSW7N60B / SSI7N60B Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 7.0 A D C - Continuous (T = 100°C) 4.4 A C I (Note 1) Drain Current - Pulsed 28 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 420 mJ AS I Avalanche Current (Note 1) 7.0 A AR E (Note 1) Repetitive Avalanche Energy 14.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 147 W C - Derate above 25°C 1.18 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8! from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.85 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
