SSU2N60B ,600V N-Channel MOSFETSSR2N60B / SSU2N60BNovember 2001SSR2N60B / SSU2N60B600V N-Channel MOSFET
SSW10N60B ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 9.0A, 600V, R = 0.8Ω @V = 10 VDS(on) ..
SSW10N60BTM ,600V N-Channel B-FETSSW10N60B / SSI10N60BNovember 2001SSW10N60B / SSI10N60B600V N-Channel MOSFET
SSW2N60B ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 2.0A, 600V, R = 5.0Ω @V = 10 VDS(on) ..
SSW2N60BTM ,600V N-Channel B-FET / Substitute of SSW2N60AFeaturesThese N-Channel enhancement mode power field effect • 2.0A, 600V, R = 5.0Ω @V = 10 VDS(on) ..
SSW7N60B ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.0A, 600V, R = 1.2Ω @V = 10 VDS(on) ..
STK4191 ,2ch./1packge, +- Power Supply Built-in Muting Circuit 25W/ch. ~ 70W/ch. THD=0.02%
STK4191V ,AF Power Amplifier (Split Power Supply) (50W + 50W min, THD = 0.08%)Features Package Dimensions• Built-in muting circuit to cut off various kinds of pop unit: mmnoise. ..
STK4191X ,2ch./1packge, +- Power Supply Built-in Muting Circuit 25W/ch. ~ 70W/ch. THD=0.02%
STK4192 ,AF Power Amplifier (Split Power Supply) (50W + 50W min, THD = 0.4%)pin assignment is the sameas that of the STK4101II series• Built-in muting circuit to cut off vario ..
STK4192II ,AF Power Amplifier (Split Power Supply) (50W + 50W min, THD = 0.4%)pin assignment is the sameas that of the STK4101II series• Built-in muting circuit to cut off vario ..
STK4195MK5 , Features of the IMST Hybird ICs
SSU2N60B
600V N-Channel MOSFET
SSR2N60B / SSU2N60B November 2001 SSR2N60B / SSU2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.8A, 600V, R = 5.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12.5 nC) planar, DMOS technology. • Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● !!!!!!!! G ● ● ● ● ● ● ● ● I-PAK D-PAK GS SSR Series SSU Series GS D !!!! !!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSR2N60B / SSU2N60B Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 1.8 A D C - Continuous (T = 100°C) 1.1 A C I (Note 1) Drain Current - Pulsed 6.0 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 120 mJ AS I Avalanche Current (Note 1) 1.8 A AR E (Note 1) Repetitive Avalanche Energy 4.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 44 W C - Derate above 25°C 0.35 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.87 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
