SSS2N60B ,600V N-Channel MOSFETSSP2N60B/SSS2N60BNovember 2001SSP2N60B/SSS2N60B600V N-Channel MOSFET
SSS3N80A , ADVANCED POWER MOSFET
SSS45N20B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 35A, 200V, R = 0.065Ω @V = 10 VDS(on) ..
SSS4N60 , 600V N-Channel MOSFET
SSS4N60 , 600V N-Channel MOSFET
SSS4N60AS , Advanced Power MOSFET
STCS05DR ,0.5A MAX CONSTANT CURRENT LED DRIVERElectrical characteristics . . . . . 65 Timing . . . . . 76 Typical performance characte ..
STCS2 ,2A MAX CONSTANT CURRENT LED DRIVERElectrical characteristics . . . . . 65 Timing . . . . . 76 Typical performance characte ..
STCS2ASPR ,2A MAX CONSTANT CURRENT LED DRIVERElectrical characteristics . . . . . 65 Timing . . . . . 76 Typical performance characte ..
STD100N03LT4 , N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET
STD100N3LF3 ,N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET(TM) II Power MOSFET in a DPAK packageElectrical characteristics (T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Par ..
STD100NH02 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
SSS2N60B
600V N-Channel MOSFET
SSP2N60B/SSS2N60B November 2001 SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 600V, R = 5.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12.5 nC) planar, DMOS technology. • Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D G TO-220 TO-220F G D S G D S SSP Series SSS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSP2N60B SSS2N60B Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 2.0 2.0 * A D C - Continuous (T = 100°C) 1.3 1.3 * A C I (Note 1) Drain Current - Pulsed 6.0 6.0 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 120 mJ AS I Avalanche Current (Note 1) 2.0 A AR E (Note 1) Repetitive Avalanche Energy 5.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 54 23 W D C - Derate above 25°C 0.43 0.18 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter SSP2N60B SSS2N60B Units R Thermal Resistance, Junction-to-Case Max. 2.32 5.5 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
