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SSS2N60A , Advanced Power MOSFET
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SSS2N60B ,600V N-Channel MOSFETSSP2N60B/SSS2N60BNovember 2001SSP2N60B/SSS2N60B600V N-Channel MOSFET
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SSS10N60B
600V N-Channel MOSFET
SSP10N60B/SSS10N60B November 2001 SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.0A, 600V, R = 0.8Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 54 nC) planar, DMOS technology. • Low Crss ( typical 32 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D G TO-220 TO-220F G D S G D S SSP Series SSS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSP10N60B SSS10N60B Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 9.0 9.0 * A D C - Continuous (T = 100°C) 5.7 5.7 * A C I (Note 1) Drain Current - Pulsed 36 36 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 520 mJ AS I Avalanche Current (Note 1) 9.0 A AR E (Note 1) Repetitive Avalanche Energy 15.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 156 50 W D C - Derate above 25°C 1.25 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter SSP10N60B SSS10N60B Units R Thermal Resistance, Junction-to-Case Max. 0.8 2.5 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
