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SSRP130B1
DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE
Application Specific Discretes
A.S.D.
SSRP130B1Where asymmetrical protection against lightning
strikes and other transient overvoltages is required :
Solid-State relays
SLIC with integrated ring generator
MAIN APPICATIONSThe SSRP130B1 is a dual asymmetrical transient
voltage suppressor designed to protect a
solid-state ring relay or SLICs with integrated ring
generator from overvoltages.
The asymmetrical protection configuration is
necessary to allow the use of all different types of
ringing schemes.
DESCRIPTION
FUNCTIONAL DIAGRAMDUAL ASYMMETRICAL OVERVOLTAGE
PROTECTION FOR TELECOM LINE
July 1998 - Ed: 4A
TM: ASD is trademarks of STMicroelectronics.
Dual bidirectional asymmetrical protection :
Stand-off voltages :
+ 130V for positive voltages
- 185V for negative voltages
Peak pulse current : IPP = 2 * 25A (5 / 310 μs)
Holding current : 150mA
FEATURES
Fig 1 : Topology of the classical line card protection.
APPLICATION INFORMATION
Fig 2 : Classical use of the SSRP130B1.The classical line card requires protection before
the ring relay and a second one for the SLIC (fig.1).
The use of new SLICs with integrated ring
generator or board based on solid state ring relay
suppresses this second protection (Fig. 2). Then
the only remaining stage, located between the line
and the ring relay, has to optimize the protection.
The classical symmetrical first stage protector
becomes not sufficient to avoid any circuit
destruction during surges.
The SSRP130B1 device takes into account this
fact and is based on asymmetrical voltage
characteristics (Fig.3a). The ring signal being
shifted back by the battery voltage, the
SSRP130B1 negative breakover value Vbo- is
greater than the positive one Vbo+. This point
guarantees a protection operation very close to the
peak of the normal operating voltage without any
disturbance of the ring signal.
Fig 3 : SSRP130B1 electrical characteristics.In addition with the 2 crowbar functions which
perform the protection of both TIP and RING lines
versus ground, a third cell assumes the differential
mode protection of the SLIC. The breakdown
voltage values of this third cell are the same for
both positive and negative parts of the
characteristics and are equivalent to the negative
breakdown voltage value of the TIP and RING
lines versus GND cells (Fig.3 b).
SSRP130B12/7
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)Note 1 : Pulse waveform :
10/1000μstr=10μstp=1000μs
5/310μstr=5μstp=310μs
1/20μstr=1μstp=20μs
2/10μstr=2μstp=10μs
100 tr p t
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
SSRP130B13/7
ELECTRICAL CHARACTERISTICS between TIP and GND, RING and GND (Tamb=25°C)Note 1 : Positive voltage means between T and G, or between R and G
Negative voltage means between G and T, or between G and T
Note 2 : See test circuit for VBO parameters
Note 3 : IR measured at VR guarantees VBR > VR
ELECTRICAL CHARACTERISTICS between TIP and RING (Tamb=25°C)0.01 0.1 1 10 100 1000
I (A)TSM
Fig. 4 : Surge peak current versus overload
duration (maximum values).
SSRP130B14/7
FUNCTION HOLDING CURRENT (IH) TEST CIRCUIT (GO-NO GO TEST)
TEST CIRCUIT FOR VBO parameters :
SSRP130B15/7
ORDER CODE
Packaging : Products supplied in antistatic tubesor tape and reel.
Weight : 0.08g
PACKAGE MECHANICAL DATA.SO8 Plastic
MARKING
MARKING : Logo, Date Code, Part Number.
SSRP130B16/7
