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SSRP105B1
DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE
1/6
Application Specific Discretes
ASD™
SSRP105B1Where asymmetrical protection against lightning
strikes and other transient overvoltagesis required: Solid-State relays SLIC with integrated ring generator
MAIN APPLICATIONSThe SSRP105B1isa dual asymmetrical transient
voltage suppressor designed to protect a
solid-state ring relayor SLICs with integrated ring
generator from overvoltages.
The asymmetrical protection configuration is
necessaryto allow the useofall different typesof
ringing schemes.
DESCRIPTION
FUNCTIONAL DIAGRAMDUAL ASYMMETRICAL OVERVOLTAGE
PROTECTION FOR TELECOM LINE
October 2002- Ed:1A
TM:ASDis trademarksof STMicroelectronics.
COMPLY WITH THE FOLLOWING STANDARDS Dual bi-directional asymmetrical protection
Stand-off voltages: Between Line and Ground
+105Vfor positive voltages
-180V for negative voltages Between Line and Line
+180Vfor positive voltages
-180V for negative voltages Peak pulse current: IPP= 50A (5/310μs) Holding current: IH+= 100mA IH-= 150mA
FEATURES
SSRP105B12/6
Fig.1: Topology ofthe classical linecard protection.
APPLICATION INFORMATION
Fig.2: Classical useof the SSRP105B1.
The classical line card requires protection before the
ring relay anda second onefor the SLIC (figure1).
The use of new SLICs with integrated ring
generatoror board basedon solid-state ring relay
suppresses this second protection (figure 2).
Then, the only remaining stage, located between
the line and the ring relay, hasto optimize the
protection.
The classical symmetrical first stage protector
becomes not sufficient to avoid any circuit
destruction during surges.
The SSRP105B1 device takes into account this
fact and is based on asymmetrical voltage
characteristics (figure 3a). The ring signal being
shifted back by the battery voltage, the
SSRP105B1 negative breakover value VBO-is
greater than the positive one VBO+. This point
guaranteesa protection operation very closeto the
peakof the normal operating voltage without any
disturbanceof the ring signal.
Fig.3: SSRP105B1 electrical characteristics. addition with the2 crowbar functions which
perform the protectionof both TIP and RING lines
versus ground,a third cell assumes the differential
mode protection of the SLIC. The breakover
voltage valuesof this third cell are the same for
both positive and negative parts of the
characteristics and are equivalentto the negative
breakover voltage valueof the TIP and RING lines
versus GND cells (figure 3b).
SSRP105B13/6
ABSOLUTE MAXIMUM RATINGS (Tamb= 25°C)
Note1: Pulse waveform:
10/1000μs tr=10μs tp=1000μs
10/560μs tr=10μs tp=560μs
5/310μs tr=5μs tp=310μs
10/160μs tr=10μs tp=160μs
8/20μs tr=8μs tp=20μs
2/10μs tr=2μs tp=10μs
100PP tr p t
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS (Tamb= 25°C)
SSRP105B14/6
ELECTRICAL CHARACTERISTICS between TIP and GND, RING and GND (Tamb=25°C)
Note1: Positive voltage means betweenT and G,or betweenRandG.
Negative voltage means betweenGandT,or betweenG andR.
Note2: Seetest circuitfor VBO parameters
Note3: IR measuredatVR guarantees VBR >VR
ELECTRICAL CHARACTERISTICS between TIP and RING (Tamb=25°C)
IH(Tamb)/IH(Tamb=25°C)
Tamb(°C)1.2 2040 6080
Fig.4: Relative variationof holding current versus
junction temperature.
0.01 0.1 1 10 100 1000
ITSM(A)
tp(s)
Fig.5: Non-repetitive peak on-state current versus
overload duration(Tj initial= +25°C)..
100 10 100 1000
C(pF)
VR(V)
Fig. 6: Capacitance versus applied reverse
voltages (typical values).
SSRP105B15/6
FUNCTION HOLDING CURRENT (IH) TEST CIRCUIT (GO-NO GO TEST)
TEST CIRCUIT FOR VBO PARAMETERS:
ORDER CODE
SSRP105B16/6
OTHER INFORMATION
FOOT-PRINT DIMENSIONS(in millimeters)
PACKAGE MECHANICAL DATASO-8 (Plastic)
Informationfurnishedis believedtobe accurateandreliable.However, STMicroelectronics assumesnoresponsibilityforthe consequencesof
useof suchinformation norfor anyinfringementof patentsorother rightsof third parties which mayresultfromits use.No licenseis grantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change withoutnotice.Thispublication supersedesand replacesall information previouslysupplied.
STMicroelectronics productsarenot authorizedfor useas critical componentsinlife support devicesor systems without express written
approvalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2002 STMicroelectronics- Printedin Italy-All rights reserved.
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