SSR1N60BTF ,600V N-Channel B-FET / Substitute of SSP1N60AFeaturesThese N-Channel enhancement mode power field effect • 0.9A, 600V, R = 12Ω @V = 10 VDS(on) G ..
SSR2N60 , 600V N-Channel MOSFET
SSR2N60B ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 1.8A, 600V, R = 5.0Ω @V = 10 VDS(on) ..
SSR2N60BTM ,600V N-Channel B-FET / Substitute of SSR2N60AFeaturesThese N-Channel enhancement mode power field effect • 1.8A, 600V, R = 5.0Ω @V = 10 VDS(on) ..
SSR4N60B ,600V N-Channel MOSFETSSR4N60B / SSU4N60BNovember 2001SSR4N60B / SSU4N60B600V N-Channel MOSFET
SSRP105B1 ,DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINEFEATURESn Dual bi-directional asymmetrical protectionTIP 1 8 GNDStand-off voltages:l Between Line a ..
STC918E , NPN Silicon Transistor
STC918SF , NPN Silicon Transistor
STC918U , NPN Silicon Transistor
STCC-02 ,CONTROL CIRCUIT FOR HOME APPLIANCE MCU BASED APPLICATIONFEATURES ■ Wide range input supply voltage operation: 7 to 27 V ■ 5 V ± 10% full tolerance Voltage ..
STCC05-B ,HOME APPLIANCE CONTROL CIRCUITAPPLICATIONS■ Home Appliance digital control ■ AC Power drive and functional safety management■ Air ..
STCC05-B ,HOME APPLIANCE CONTROL CIRCUITBlock diagram Figure 3. Pin-out connectionsVPSRL IN4 4 V VPS 1 20 DD20A RELAYVPS DRIVERRL IN3 3 SYN ..
SSR1N60BTF
600V N-Channel B-FET / Substitute of SSP1N60A
SSR1N60B / SSU1N60B November 2001 SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.9A, 600V, R = 12Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.9 nC) planar, DMOS technology. • Low Crss ( typical 3.6 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● !!!!!!!! G ● ● ● ● ● ● ● ● I-PAK D-PAK GS SSR Series SSU Series GS D !!!! !!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSR1N60B / SSU1N60B Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 0.9 A D C - Continuous (T = 100°C) 0.57 A C I (Note 1) Drain Current - Pulsed 3.0 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 50 mJ AS I Avalanche Current (Note 1) 0.9 A AR E (Note 1) Repetitive Avalanche Energy 2.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 28 W C - Derate above 25°C 0.22 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 4.53 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
