SSP4N60B ,600V N-Channel MOSFETSSP4N60B/SSS4N60BSSP4N60B/SSS4N60B600V N-Channel MOSFET
SSP4N60B ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 4.0A, 600V, R = 2.5Ω @V = 10 VDS(on) ..
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STC5NF20V ,N-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
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SSP4N60B
600V N-Channel MOSFET
SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 600V, R = 2.5Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC) planar, DMOS technology. • Low Crss ( typical 14 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • TO-220F package isolation = 4.0kV (Note 6) suited for high efficiency switch mode power supplies. D G TO-220 TO-220F G D S G D S SSP Series SSS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSP4N60B SSS4N60B Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 4.0 4.0 * A D C - Continuous (T = 100°C) 2.5 2.5 * A C I (Note 1) Drain Current - Pulsed 16 16 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 240 mJ AS I Avalanche Current (Note 1) 4.0 A AR E (Note 1) Repetitive Avalanche Energy 10 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 100 33 W D C - Derate above 25°C 0.8 0.26 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter SSP4N60B SSS4N60B Units R Thermal Resistance, Junction-to-Case Max. 1.25 3.79 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2002 Rev. B, June 2002
