SSN1N45B ,450V N-Channel B-FETFeaturesThese N-Channel enhancement mode power field effect • 0.5A, 450V, R = 4.25Ω @V = 10 VDS(on) ..
SSP10N60A ,600V N-Channel A-FET / Replaced by SSP10N60BFEATURESBV = 600 VDSS Avalanche Rugged TechnologyΩR = 0.8DS(on) Rugged Gate Oxide Tec ..
SSP1N60A , Advanced Power MOSFET
SSP1N60A , Advanced Power MOSFET
SSP2N60A , Advanced Power MOSFET
SSP2N60A , Advanced Power MOSFET
STC13003 , NPN POWER TRANSISTORS
STC13007 , NPN POWER TRANSISTORS
STC2073F , NPN Silicon Transistor
STC3265 , NPN Silicon Transistor
STC403 , NPN Silicon Transistor
STC403 , NPN Silicon Transistor
SSN1N45B
450V N-Channel B-FET
SSN1N45B SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.5A, 450V, R = 4.25Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.5 nC) planar, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to • 100% avalanche tested minimize on-state resistance, provide superior switching • Improved dv/dt capability performance, and withstand high energy pulse in the • Gate-Source Voltage ± 50V guaranteed avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration. D !!!! !!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-92 !!!!!!!! S SSN Series G D S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSN1N45B Units V Drain-Source Voltage 450 V DSS I - Continuous (T = 25°C) Drain Current 0.5 A D C - Continuous (T = 100°C) 0.32 A C I (Note 1) Drain Current - Pulsed 4.0 A DM V Gate-Source Voltage ± 50 V GSS E (Note 2) Single Pulsed Avalanche Energy 108 mJ AS I Avalanche Current (Note 1) 0.5 A AR E (Note 1) Repetitive Avalanche Energy 0.25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) 0.9 W P A D Power Dissipation (T = 25°C) 2.5 W L - Derate above 25°C 0.02 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R (Note 6a) Thermal Resistance, Junction-to-Lead -- 50 °C/W θJL R Thermal Resistance, Junction-to-Ambient (Note 6b) -- 140 °C/W θJA ©2002 Rev. A, November 2002
