SSM6P41FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Conditions Min. ..
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SSM6P41FE
Small-signal MOSFET 2 in 1
SSM6P41FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V)
SSM6P41FE Power Management Switches
• 1.5-V drive Low on-resistance : RDS(ON) = 1.04 Ω (max) (@VGS = -1.5 V)
: RDS(ON) = 0.67 Ω (max) (@VGS = -1.8 V)
: RDS(ON) = 0.44 Ω (max) (@VGS = -2.5 V)
: RDS(ON) = 0.30 Ω (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 3.0 mg (typ.)
6 5 4
1 2 3 4 3
