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SSM6P40TU
Small-signal MOSFET 2 in 1
SSM6P40TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type
SSM6P40TU Power Management Switch Applications High-Speed Switching Applications 4.0 V drive
• P-ch, 2-in-1
• Low ON-resistance: Ron = 403mΩ (max) (@VGS = –4 V)
Ron = 226mΩ (max) (@VGS = –10 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note1: Mounted on an FR4 board. (Total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 7.0 mg (typ.)
6 4
1 2 3
1 2 3
6 5
