SSM6N44FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
SSM6N48FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min T ..
SSM6N55NU ,Small-signal MOSFET 2 in 1Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25) ) ) )a a a ..
SSM6N7002BFU ,Small-signal MOSFET 2 in 1Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 34Characteristics Symbol Rating Unit Drain-sou ..
SSM6N7002BFU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
SSM6P05FU ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsApplications Small package Low on resistance : R = 3.3 Ω (max) (@V = −4 V) on GS : R = 4 ..
STBV68 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTBV68®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF D ..
STC03DE170 ,HYBRID EMITTER SWITCHED BIPOLAR TRANSISTORFeatures Figure 1: PackageV I RCS(ON) C CS(ON)1 V 1.8 A 0.55 Wn LOW EQUIVALENT ON RESISTANCEn VERY ..
STC04IE170HP ,Monolithic emitter switched bipolar transistor ESBT? 1700 VElectrical characteristicsSymbol Parameter Test conditions Min. Typ. Max. UnitCollector cut-off cur ..
STC128 , NPN Silicon Transistor
STC12C5404 , STC12C5410AD
STC12C5406AD , STC12C5410AD
SSM6N44FU
Small-signal MOSFET 2 in 1
SSM6N44FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N44FU High Speed Switching Applications
Analog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 6.8 mg (typ.)
6 5 4
1 2 3
6 5 4
1 2 3
