SSM6N43FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
SSM6N44FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
SSM6N44FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
SSM6N48FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min T ..
SSM6N55NU ,Small-signal MOSFET 2 in 1Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25) ) ) )a a a ..
SSM6N7002BFU ,Small-signal MOSFET 2 in 1Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 34Characteristics Symbol Rating Unit Drain-sou ..
STBV45-AP ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTBV45®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORTable 1: Order CodesOrdering Code Marking Pac ..
STBV68 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTBV68®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF D ..
STC03DE170 ,HYBRID EMITTER SWITCHED BIPOLAR TRANSISTORFeatures Figure 1: PackageV I RCS(ON) C CS(ON)1 V 1.8 A 0.55 Wn LOW EQUIVALENT ON RESISTANCEn VERY ..
STC04IE170HP ,Monolithic emitter switched bipolar transistor ESBT? 1700 VElectrical characteristicsSymbol Parameter Test conditions Min. Typ. Max. UnitCollector cut-off cur ..
STC128 , NPN Silicon Transistor
STC12C5404 , STC12C5410AD
SSM6N43FU
Small-signal MOSFET 2 in 1
SSM6N43FU
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N43FU High-Speed Switching Applications
• 1.5-V drive Low ON-resistance : RDS(ON) = 1.52 Ω (max) (@VGS = 1.5V)
: RDS(ON) = 1.14 Ω (max) (@VGS = 1.8V)
: RDS(ON) = 0.85 Ω (max) (@VGS = 2.5V)
: RDS(ON) = 0.66 Ω (max) (@VGS = 4.5V)
: RDS(ON) = 0.63 Ω (max) (@VGS = 5.0V)
Absolute Maximum Ratings (Ta = 25°C) (Q1,Q2 Common) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking Equivalent Circuit (top view) 6 5 4
1 2 3 4 3
