SSM6N37FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ ..
SSM6N43FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
SSM6N44FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
SSM6N44FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
SSM6N48FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min T ..
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STBV45 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTBV45®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF D ..
STBV45-AP ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTBV45®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORTable 1: Order CodesOrdering Code Marking Pac ..
STBV68 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTBV68®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF D ..
STC03DE170 ,HYBRID EMITTER SWITCHED BIPOLAR TRANSISTORFeatures Figure 1: PackageV I RCS(ON) C CS(ON)1 V 1.8 A 0.55 Wn LOW EQUIVALENT ON RESISTANCEn VERY ..
STC04IE170HP ,Monolithic emitter switched bipolar transistor ESBT? 1700 VElectrical characteristicsSymbol Parameter Test conditions Min. Typ. Max. UnitCollector cut-off cur ..
SSM6N37FE
Small-signal MOSFET 2 in 1
SSM6N37FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N37FE High-Speed Switching Applications Analog Switching Applications
• 1.5-V drive Suitable for high-density mounting due to compact package
• Low ON-resistance RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V)
RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V)
RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V)
RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
Marking Equivalent Circuit (top view) 単位: mm
Weight: 3.0 mg (typ.)
6 5 4
1 2 3 4 3
