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SSM6N29TUTOSHIBAN/a45000avaiSmall-signal MOSFET 2 in 1


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SSM6N29TU
Small-signal MOSFET 2 in 1
SSM6N29TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N29TU

High-Speed Switching Applications • 1.8 V drive
• N-ch 2-in-1
• Low ON-resistance: Ron = 235 mΩ (max) (@VGS = 1.8 V)
Ron = 178 mΩ (max) (@VGS = 2.5 V)
Ron = 143 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1 , Q2 Common)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure
rate, etc). Note 1: Mounted on an FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm2 )
Electrical Characteristics (Ta = 25°C) (Q1 , Q2 Common)

Unit: mm
Weight: 7 mg (typ.)
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