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SSM6N17FU
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
SSM6N17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N17FU High Speed Switching Applications
Analog Switch Applications Suitable for high-density mounting due to compact package High drain-source voltage High speed switching
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Total rating,Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6)
Marking Equivalent Circuit This transistor is a electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 6.8 mg (typ.)
6 5 4
1 2 3
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