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SSM6N15FUTOSN/a6000avaiHigh Speed Switching Applications Analog Switching Applications


SSM6N15FU ,High Speed Switching Applications Analog Switching ApplicationsSSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switch ..
SSM6N16FE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsSSM6N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FE High Speed Switc ..
SSM6N16FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications  Suitable for high-density mounting due to compact package  Low on resistance : ..
SSM6N17FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications  Suitable for high-density mounting due to compact package  High drain-source v ..
SSM6N24TU ,Small-signal MOSFET 2 in 1absolute maximum ratings. Weight: 7.0 mg (typ.) Please design the appropriate reliability upon revi ..
SSM6N25TU ,Small-signal MOSFET 2 in 1absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
STB95NF03T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB9NB50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STB9NB50T4 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STB9NB60 ,N-CHANNEL 600V -0.7 OHMSTB9NB60®2 2N - CHANNEL 600V - 0.7Ω - 9A - I PAK/D PAK PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB9 ..
STB9NB60 ,N-CHANNEL 600V -0.7 OHMSTB9NB60®2 2N - CHANNEL 600V - 0.7Ω - 9A - I PAK/D PAK PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB9 ..
STB9NC60 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..


SSM6N15FU
High Speed Switching Applications Analog Switching Applications
SSM6N15FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N15FU

High Speed Switching Applications
Analog Switching Applications Small package Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V)
: Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Maximum Ratings (Ta �
�� � 25°C) (Q1, Q2 Common)
Note: Total rating
Marking Equivalent Circuit (top view)

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 6.8 mg (typ.)
6 5 4
1 2 3
6 5 4
1 2 3
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