SSM6N15AFE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min T ..
SSM6N15FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
SSM6N15FU ,High Speed Switching Applications Analog Switching ApplicationsSSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switch ..
SSM6N16FE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsSSM6N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FE High Speed Switc ..
SSM6N16FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Suitable for high-density mounting due to compact package Low on resistance : ..
SSM6N17FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Suitable for high-density mounting due to compact package High drain-source v ..
STB8NM60T4 ,N-CHANNEL 650V@TjmaxAbsolute maximum ratingsValueSymbol Parameter UnitTO-220 IPAKTO-220FPD²PAK DPAKV Gate-source voltag ..
STB90NF03L ,N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB90NF03LT4 ,N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB95NF03T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB9NB50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STB9NB50T4 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
SSM6N15AFE
Small-signal MOSFET 2 in 1
SSM6N15AFE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
SSM6N15AFE Load Switching Applications • 2.5 V drive
• N-ch 2-in-1
• Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 3.0 mg (typ.)
6 5 4
1 2 3 4 3
