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SSM6N09FU
Field Effect Transistor Silicon N Channel MOS Type High Speed Switch Applications
SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N09FU High Speed Switching Applications Small package Low Drain-Source ON resistance.
: Ron = 0.7 Ω (max) (@VGS = 10 V)
: Ron = 1.2 Ω (max) (@VGS = 4 V)
Maximum Ratings (Ta ��� � 25°C) (Q1, Q2 Common)
Note1: Total rating, mounted on FR4 board
(25.4 mm � 25.4 mm � 1.6 t, Cu Pad: 0.32 mm2 � 6) Figure 1.
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 6.8 mg (typ.)
