SSM6N04FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switch ApplicationsApplications Unit: mm With built-in gate-source resistor: R = 1 MΩ (typ.) GS 2.5 V gate driv ..
SSM6N04FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switch ApplicationsSSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switc ..
SSM6N05FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switch ApplicationsApplications Unit: mm Small package Low on resistance : R = 0.8 Ω (max) (@V = 4 V) on GS ..
SSM6N09FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switch ApplicationsSSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switc ..
SSM6N15AFE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min T ..
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STB85NF55T4 ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB8NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTB8NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTB8NA50 500 V < ..
STB8NC70Z-1 ,N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STB8NM60T4 ,N-CHANNEL 650V@TjmaxAbsolute maximum ratingsValueSymbol Parameter UnitTO-220 IPAKTO-220FPD²PAK DPAKV Gate-source voltag ..
STB90NF03L ,N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB90NF03LT4 ,N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
SSM6N04FU
Field Effect Transistor Silicon N Channel MOS Type High Speed Switch Applications
SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N04FU High Speed Switch Applications With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package
Maximum Ratings (Ta ��� � 25°C) (Q1, Q2 common)
Note: Total rating
Marking Pin Assignment (top view)
(Q1, Q2 common)
Equivalent Circuit Unit: mm
Weight: 6.8 mg (typ.)
