SSM6L39TU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. MaxUnitV I = ..
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STB85NF3LL-T4 ,N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETSTB85NF3LL2N-CHANNEL 30V - 0.006Ω - 85A D PAKLOW GATE CHARGE STripFET™II POWER MOSFETTYPE V R IDSS ..
STB85NF55T4 ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
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SSM6L39TU
Small-signal MOSFET 2 in 1
SSM6L39TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L39TU Power Management Switch Applications High-Speed Switching Applications • N-ch: 1.5-V drive
P-ch: 1.8-V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: Ron = 247 mΩ (max) (@VGS = 1.5 V)
Ron = 190 mΩ (max) (@VGS = 1.8 V)
Ron = 139 mΩ (max) (@VGS = 2.5 V) Q2 P-ch: Ron = 430 mΩ (max) (@VGS = −1.8 V)
Ron = 294 mΩ (max) (@VGS = −2.5 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Q2 Absolute Maximum Ratings (Ta = 25°C)
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Mounted on an FR4 board. (total dissipation) (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm2 )
Marking Equivalent Circuit (top view) Unit: mm
Weight: 7.0 mg (typ.)
6 4
