SSM6L12TU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate ..
SSM6L13TU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. MaxUnitV I ..
SSM6L16FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM6L36FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitV I = ..
SSM6L39TU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. MaxUnitV I = ..
SSM6N03FE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Input impedance is high. Driving current is extremely low. Can be directly dr ..
STB80PF55T4 ,P-CHANNEL 55VSTB80PF552P-CHANNEL 55V - 0.016 Ω - 80A D PAKSTripFET™ II POWER MOSFETPRELIMINARY DATATYPE V R IDSS ..
STB85NF3LL-1 ,N-CHANNEL 30V 0.006 OHM 85A TO-220/I2PAK LOW GATE CHARGE STRIPFET MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB85NF3LLT4 ,N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB85NF3LL-T4 ,N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETSTB85NF3LL2N-CHANNEL 30V - 0.006Ω - 85A D PAKLOW GATE CHARGE STripFET™II POWER MOSFETTYPE V R IDSS ..
STB85NF55T4 ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB8NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTB8NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTB8NA50 500 V < ..
SSM6L12TU
Small-signal MOSFET 2 in 1
SSM6L12TU
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L12TU High-Speed Switching Applications Optimum for high-density mounting in small packages
• Low ON-resistance Q1: RDS(ON) = 180mΩ (max) (@VGS = 2.5 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V)
Q1 Absolute Maximum Ratings (Ta = 25°C) A
Q2 Absolute Maximum Ratings (Ta = 25°C) A
Absolute Maximum Ratings (Q1,Q2 Common) (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Marking Equivalent Circuit (top view) Unit: mm
Weight: 7.0 mg (typ.)
1 2 3
