SSM6L05FU ,Field Effect Transistor Silicon N/P Channel MOS Type Power Management Switch High Speed Switching ApplicationsElectrical Characteristics (Ta 25°C)Characteristics Symbol Test Condition Min Typ. MaxUnitGat ..
SSM6L09FU ,Field Effect Transistor Silicon N/P Channel MOS Type Power Management Switch High Speed Switching ApplicationsElectrical Characteristics (Ta 25°C)Characteristics Symbol Test Condition Min Typ. MaxUnitGat ..
SSM6L11TU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitGate ..
SSM6L12TU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate ..
SSM6L13TU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. MaxUnitV I ..
SSM6L16FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
STB80NF55L-08. ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T =25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condit ..
STB80PF55 ,P-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STB80PF55T4 ,P-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB80PF55T4 ,P-CHANNEL 55VAPPLICATIONS■ MOTOR CONTROL■ DC-DC & DC-AC CONVERTERS
STB80PF55T4 ,P-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STB80PF55T4 ,P-CHANNEL 55VSTB80PF552P-CHANNEL 55V - 0.016 Ω - 80A D PAKSTripFET™ II POWER MOSFETPRELIMINARY DATATYPE V R IDSS ..
SSM6L05FU
Field Effect Transistor Silicon N/P Channel MOS Type Power Management Switch High Speed Switching Applications
SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
SSM6L05FU Power Management Switch
High Speed Switching Applications Small package Low on resistance Q1: Ron = 0.8 Ω (max) (@VGS = 4 V) Q2: Ron = 3.3 Ω (max) (@VGS = −4 V) Low gate threshold voltage
Q1 Maximum Ratings (Ta ��� � 25°C)
Q2 Maximum Ratings (Ta ��� � 25°C) VGSS
Maximum Ratings (Q1, Q2 common) (Ta ��� � 25°C) Tstg �55~150 °C
Note1: Total rating, mounted on FR4 board
(25.4 mm � 25.4 mm � 1.6 t, Cu Pad: 0.32 mm2 � 6)
Unit: mm
Weight: 6.8 mg (typ.)
