SSM6K404TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) 25Characteristic Symbol Rating Unit 3Drain–source voltage V 20 ..
SSM6K407TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25℃) (Note) 1,2,5,6 : Drain 3 : Gate Characteristic Symbol Rat ..
SSM6K411TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 3 4Characteristic Symbol Rating Unit Drain-Source voltage V 20 ..
SSM6L05FU ,Field Effect Transistor Silicon N/P Channel MOS Type Power Management Switch High Speed Switching ApplicationsElectrical Characteristics (Ta 25°C)Characteristics Symbol Test Condition Min Typ. MaxUnitGat ..
SSM6L09FU ,Field Effect Transistor Silicon N/P Channel MOS Type Power Management Switch High Speed Switching ApplicationsElectrical Characteristics (Ta 25°C)Characteristics Symbol Test Condition Min Typ. MaxUnitGat ..
SSM6L11TU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitGate ..
STB80NF55-06T4 ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB80NF55L-06T4 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STB80NF55L-08 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 55 VDS GSV Drain-g ..
STB80NF55L-08. ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T =25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condit ..
STB80PF55 ,P-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STB80PF55T4 ,P-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
SSM6K404TU
Small-signal MOSFET
SSM6K404TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K404TU High-Speed Switching Applications Power Management Switch Applications
• 1.5-V drive
• Low ON-resistance: RDS(ON) = 147 mΩ (max) (@VGS = 1.5 V)
RDS(ON) = 100 mΩ (max) (@VGS = 1.8 V)
RDS(ON) = 70 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 55 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25˚C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C) Unit: mm
Weight: 7.0 mg (typ.)
