SSM6K25FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitGate ..
SSM6K34TU , High Current Switching Applications
SSM6K403TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) (Note) 1,2,5,6 : Drain Characteristic Symbol Rating Unit 3 : ..
SSM6K404TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) 25Characteristic Symbol Rating Unit 3Drain–source voltage V 20 ..
SSM6K407TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25℃) (Note) 1,2,5,6 : Drain 3 : Gate Characteristic Symbol Rat ..
SSM6K411TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 3 4Characteristic Symbol Rating Unit Drain-Source voltage V 20 ..
STB80NF55-06 ,N-CHANNEL 55VSTB80NF55-06STP80NF55-06 STP80NF55-06FP2N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220FP/D PAKSTripFET ..
STB80NF55-06T4 ,N-CHANNEL 55VSTB80NF55-06 STB80NF55-06-1STP80NF55-06 STP80NF55-06FP²N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220F ..
STB80NF55-06T4 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB80NF55-06/-1 STP80NF55-06FPSTP80NF55-06V Drai ..
STB80NF55-06T4 ,N-CHANNEL 55VAPPLICATIONS■ HIGH-EFFICIENCY DC-DC CONVERTERS■ UPS AND MOTOR CONTROL■ DC-DC CONVERTERS■ AUTOMOTIVE ..
STB80NF55-06T4 ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB80NF55L-06T4 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
SSM6K25FE
Small-signal MOSFET
SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6K25FE High Speed Switching Applications Optimum for high-density mounting in small packages
• Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V)
Ron = 190mΩ (max) (@VGS = 2.5 V)
Ron = 145mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 3.0 mg (typ.)
1 2 3 4
123 5
