SSM6K06FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 160 mΩ max (@V = 4 V) on GS : ..
SSM6K07FU ,Field Effect Transistor Silicon N Channel MOS Type DC-DC Converters High Speed Switching ApplicationsApplications Small package Low on resistance : R = 130 mΩ max (@V = 10 V) on GS : R = 220 ..
SSM6K08FU ,Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category High Speed Switching ApplicationsSSM6K08FU CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category S ..
SSM6K202FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM6K203FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain–source voltage V 20 V ..
SSM6K204FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain–source voltage V 20 V ..
STB80NE06-10 ,NSTB80NE06-10N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) D ..
STB80NF03L-04 ,N-CHANNEL 30VSTP80NF03L-04STB80NF03L-04 STB80NF03L-04-12 2N-CHANNEL 30V - 0.0035 Ω - 80A D PAK/I PAK/TO-220STrip ..
STB80NF03L-04 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB80NF03L-04-1 ,N-CHANNEL 30VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ MOTOR CONTROL, AUDIO AMPLIFIERS■ DC-DC & DC-AC CO ..
STB80NF03L-04T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STB80NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
SSM6K06FU
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
SSM6K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K06FU High Speed Switching Applications Small package Low on resistance : Ron = 160 mΩ max (@VGS = 4 V) : Ron = 210 mΩ max (@VGS = 2.5 V) Low gate threshold voltage
Maximum Ratings (Ta ��� � 25°C)
Note 1: Mounted on FR4 board.
(25.4 mm � 25.4 mm � 1.6 t, Cu pad: 0.32 mm2 � 6) Figure 1.
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 6.8 mg (typ.)
