SSM6J51TU ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
SSM6J53FE ,Small-signal MOSFETabsolute maximum ratings. TOSHIBA 2-2N1A Please design the appropriate reliability upon reviewing ..
SSM6K06FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 160 mΩ max (@V = 4 V) on GS : ..
SSM6K07FU ,Field Effect Transistor Silicon N Channel MOS Type DC-DC Converters High Speed Switching ApplicationsApplications Small package Low on resistance : R = 130 mΩ max (@V = 10 V) on GS : R = 220 ..
SSM6K08FU ,Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category High Speed Switching ApplicationsSSM6K08FU CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category S ..
SSM6K202FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = ..
STB80NE03L-06 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STB80NE03L-06T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STB80NE06-10 ,NSTB80NE06-10N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) D ..
STB80NF03L-04 ,N-CHANNEL 30VSTP80NF03L-04STB80NF03L-04 STB80NF03L-04-12 2N-CHANNEL 30V - 0.0035 Ω - 80A D PAK/I PAK/TO-220STrip ..
STB80NF03L-04 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB80NF03L-04-1 ,N-CHANNEL 30VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ MOTOR CONTROL, AUDIO AMPLIFIERS■ DC-DC & DC-AC CO ..
SSM6J51TU
Small-signal MOSFET
SSM6J51TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
SSM6J51TU High Current Switching Applications Suitable for high-density mounting due to compact package Low on-resistance: Ron = 54 mΩ (max) (@VGS = -2.5 V) 85 mΩ (max) (@VGS = -1.8 V)
150mΩ(max) (@VGS = -1.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 7 mg (typ.)
1 2 3 4
123 5
