SSM6J50TU ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
SSM6J51TU ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
SSM6J53FE ,Small-signal MOSFETabsolute maximum ratings. TOSHIBA 2-2N1A Please design the appropriate reliability upon reviewing ..
SSM6K06FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 160 mΩ max (@V = 4 V) on GS : ..
SSM6K07FU ,Field Effect Transistor Silicon N Channel MOS Type DC-DC Converters High Speed Switching ApplicationsApplications Small package Low on resistance : R = 130 mΩ max (@V = 10 V) on GS : R = 220 ..
SSM6K08FU ,Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category High Speed Switching ApplicationsSSM6K08FU CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category S ..
STB7NC80Z ,N-CHANNEL 800VAPPLICATIONS■ SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION■ WELDING EQUIPMENTO ..
STB7NK80ZT4 ,N-CHANNEL 800VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP7NK80ZSTB7NK80Z STP7NK80ZFPSTB7NK80Z-1V Drain ..
STB80NE03L-06 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STB80NE03L-06T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STB80NE06-10 ,NSTB80NE06-10N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) D ..
STB80NF03L-04 ,N-CHANNEL 30VSTP80NF03L-04STB80NF03L-04 STB80NF03L-04-12 2N-CHANNEL 30V - 0.0035 Ω - 80A D PAK/I PAK/TO-220STrip ..
SSM6J50TU
Small-signal MOSFET
SSM6J50TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J50TU High Current Switching Applications Compact package suitable for high-density mounting Low on-resistance: Ron = 205mΩ (max) (@VGS = -2.0 V)
Ron = 100mΩ (max) (@VGS = -2.5 V)
Ron = 64mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking Equivalent Circuit
Handling Precaution When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 7 mg (typ.)
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