SSM6J505NU ,Small-signal MOSFETAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25) ) ) )a a a ..
SSM6J50TU ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
SSM6J51TU ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
SSM6J53FE ,Small-signal MOSFETabsolute maximum ratings. TOSHIBA 2-2N1A Please design the appropriate reliability upon reviewing ..
SSM6K06FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 160 mΩ max (@V = 4 V) on GS : ..
SSM6K07FU ,Field Effect Transistor Silicon N Channel MOS Type DC-DC Converters High Speed Switching ApplicationsApplications Small package Low on resistance : R = 130 mΩ max (@V = 10 V) on GS : R = 220 ..
STB7NC70Z-1 ,N-CHANNEL 700V 1.1OHM 6A TO-220 TO-220FP I2PAK ZENER PROTECTED POWERMESH III MOSFETSTP7NC70Z - STP7NC70ZFPSTB7NC70Z - STB7NC70Z-12 2N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D PAK/I PAKZe ..
STB7NC80Z ,N-CHANNEL 800VAPPLICATIONS■ SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION■ WELDING EQUIPMENTO ..
STB7NK80ZT4 ,N-CHANNEL 800VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP7NK80ZSTB7NK80Z STP7NK80ZFPSTB7NK80Z-1V Drain ..
STB80NE03L-06 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STB80NE03L-06T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STB80NE06-10 ,NSTB80NE06-10N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) D ..
SSM6J505NU
Small-signal MOSFET
SSM6J505NU
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J505NUSSM6J505NUSSM6J505NUSSM6J505NU
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Power Management Switches
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) 1.2 V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V)
RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 12 mΩ (max) (@VGS = -4.5 V)
3. 3. 3. 3. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment
